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Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite

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<mark>Journal publication date</mark>18/06/2015
<mark>Journal</mark>Nano Letters
Issue number7
Volume15
Number of pages8
Pages (from-to)4348-4355
Publication StatusPublished
Early online date18/06/15
<mark>Original language</mark>English

Abstract

The monolithic integration of InAs1–xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs1–xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1–xSbx nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1–xSbx nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1–xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.

Bibliographic note

Post Print: “This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2015 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b00411