Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 04/2013 |
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<mark>Journal</mark> | Microelectronics Reliability |
Issue number | 4 |
Volume | 53 |
Number of pages | 4 |
Pages (from-to) | 540-543 |
Publication Status | Published |
<mark>Original language</mark> | English |
A compact analytical approach for calculation of effective channel length in graphene nanoribbon field effect transistor (GNRFET) is presented in this paper. The modelling is begun by applying Gauss's law and solving Poisson's equation. We include the effect of quantum capacitance and GNR's intrinsic carrier concentration in our model. Based on the model the effects of several parameters such as drain-source voltage, channel length, and oxide thickness are studied on the length of effective channel in GNRFETs.