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An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

Research output: Contribution to journalJournal articlepeer-review

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  • M. Ghadiry
  • M. Nadi
  • M. Bahadorian
  • Asrulnizam A. B. D. Manaf
  • H. Karimi
  • Hatef Sadeghi
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<mark>Journal publication date</mark>04/2013
<mark>Journal</mark>Microelectronics Reliability
Issue number4
Volume53
Number of pages4
Pages (from-to)540-543
Publication StatusPublished
<mark>Original language</mark>English

Abstract

A compact analytical approach for calculation of effective channel length in graphene nanoribbon field effect transistor (GNRFET) is presented in this paper. The modelling is begun by applying Gauss's law and solving Poisson's equation. We include the effect of quantum capacitance and GNR's intrinsic carrier concentration in our model. Based on the model the effects of several parameters such as drain-source voltage, channel length, and oxide thickness are studied on the length of effective channel in GNRFETs.