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An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors. / Ghadiry, M.; Nadi, M.; Bahadorian, M. et al.
In: Microelectronics Reliability, Vol. 53, No. 4, 04.2013, p. 540-543.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ghadiry, M, Nadi, M, Bahadorian, M, Manaf, AABD, Karimi, H & Sadeghi, H 2013, 'An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors', Microelectronics Reliability, vol. 53, no. 4, pp. 540-543. https://doi.org/10.1016/j.microrel.2012.12.002

APA

Ghadiry, M., Nadi, M., Bahadorian, M., Manaf, A. A. B. D., Karimi, H., & Sadeghi, H. (2013). An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors. Microelectronics Reliability, 53(4), 540-543. https://doi.org/10.1016/j.microrel.2012.12.002

Vancouver

Ghadiry M, Nadi M, Bahadorian M, Manaf AABD, Karimi H, Sadeghi H. An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors. Microelectronics Reliability. 2013 Apr;53(4):540-543. doi: 10.1016/j.microrel.2012.12.002

Author

Ghadiry, M. ; Nadi, M. ; Bahadorian, M. et al. / An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors. In: Microelectronics Reliability. 2013 ; Vol. 53, No. 4. pp. 540-543.

Bibtex

@article{f5bfb0f4043543f78a7f0e9450207c0a,
title = "An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors",
abstract = "A compact analytical approach for calculation of effective channel length in graphene nanoribbon field effect transistor (GNRFET) is presented in this paper. The modelling is begun by applying Gauss's law and solving Poisson's equation. We include the effect of quantum capacitance and GNR's intrinsic carrier concentration in our model. Based on the model the effects of several parameters such as drain-source voltage, channel length, and oxide thickness are studied on the length of effective channel in GNRFETs. ",
keywords = "SOI POWER MOSFETS, CIRCUIT SIMULATION, BREAKDOWN VOLTAGE, ANALYTICAL-MODEL, SATURATION, REGION",
author = "M. Ghadiry and M. Nadi and M. Bahadorian and Manaf, {Asrulnizam A. B. D.} and H. Karimi and Hatef Sadeghi",
year = "2013",
month = apr,
doi = "10.1016/j.microrel.2012.12.002",
language = "English",
volume = "53",
pages = "540--543",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "4",

}

RIS

TY - JOUR

T1 - An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

AU - Ghadiry, M.

AU - Nadi, M.

AU - Bahadorian, M.

AU - Manaf, Asrulnizam A. B. D.

AU - Karimi, H.

AU - Sadeghi, Hatef

PY - 2013/4

Y1 - 2013/4

N2 - A compact analytical approach for calculation of effective channel length in graphene nanoribbon field effect transistor (GNRFET) is presented in this paper. The modelling is begun by applying Gauss's law and solving Poisson's equation. We include the effect of quantum capacitance and GNR's intrinsic carrier concentration in our model. Based on the model the effects of several parameters such as drain-source voltage, channel length, and oxide thickness are studied on the length of effective channel in GNRFETs. 

AB - A compact analytical approach for calculation of effective channel length in graphene nanoribbon field effect transistor (GNRFET) is presented in this paper. The modelling is begun by applying Gauss's law and solving Poisson's equation. We include the effect of quantum capacitance and GNR's intrinsic carrier concentration in our model. Based on the model the effects of several parameters such as drain-source voltage, channel length, and oxide thickness are studied on the length of effective channel in GNRFETs. 

KW - SOI POWER MOSFETS

KW - CIRCUIT SIMULATION

KW - BREAKDOWN VOLTAGE

KW - ANALYTICAL-MODEL

KW - SATURATION

KW - REGION

U2 - 10.1016/j.microrel.2012.12.002

DO - 10.1016/j.microrel.2012.12.002

M3 - Journal article

VL - 53

SP - 540

EP - 543

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 4

ER -