12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Angular dependence of domain wall resistivity i...
View graph of relations

« Back

Angular dependence of domain wall resistivity in artificial magnetic domain structures

Research output: Contribution to journalJournal article

Published

  • A. Aziz
  • S. J. Bending
  • H. G. Roberts
  • S. Crampin
  • P. J. Heard
  • C. H. Marrows
???articleNumber???206602
Journal publication date17/11/2006
JournalPhysical review letters
Journal number20
Volume97
Number of pages4
Original languageEnglish

Abstract

We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho(down arrow)/rho(up arrow)similar to 5.5, in good agreement with thin film band structure calculations.

Bibliographic note

© 2006 The American Physical Society