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Angular dependence of domain wall resistivity in artificial magnetic domain structures

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  • A. Aziz
  • S. J. Bending
  • H. G. Roberts
  • S. Crampin
  • P. J. Heard
  • C. H. Marrows
Article number206602
<mark>Journal publication date</mark>17/11/2006
<mark>Journal</mark>Physical review letters
Issue number20
Number of pages4
Publication StatusPublished
<mark>Original language</mark>English


We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho(down arrow)/rho(up arrow)similar to 5.5, in good agreement with thin film band structure calculations.

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© 2006 The American Physical Society