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Angular dependence of domain wall resistivity in artificial magnetic domain structures

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Angular dependence of domain wall resistivity in artificial magnetic domain structures. / Aziz, A.; Bending, S. J.; Roberts, H. G. et al.
In: Physical review letters, Vol. 97, No. 20, 206602, 17.11.2006.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Aziz, A, Bending, SJ, Roberts, HG, Crampin, S, Heard, PJ & Marrows, CH 2006, 'Angular dependence of domain wall resistivity in artificial magnetic domain structures', Physical review letters, vol. 97, no. 20, 206602. https://doi.org/10.1103/PhysRevLett.97.206602

APA

Aziz, A., Bending, S. J., Roberts, H. G., Crampin, S., Heard, P. J., & Marrows, C. H. (2006). Angular dependence of domain wall resistivity in artificial magnetic domain structures. Physical review letters, 97(20), Article 206602. https://doi.org/10.1103/PhysRevLett.97.206602

Vancouver

Aziz A, Bending SJ, Roberts HG, Crampin S, Heard PJ, Marrows CH. Angular dependence of domain wall resistivity in artificial magnetic domain structures. Physical review letters. 2006 Nov 17;97(20):206602. doi: 10.1103/PhysRevLett.97.206602

Author

Aziz, A. ; Bending, S. J. ; Roberts, H. G. et al. / Angular dependence of domain wall resistivity in artificial magnetic domain structures. In: Physical review letters. 2006 ; Vol. 97, No. 20.

Bibtex

@article{c20cb2b8340f4ae890c020743ce745c3,
title = "Angular dependence of domain wall resistivity in artificial magnetic domain structures",
abstract = "We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho(down arrow)/rho(up arrow)similar to 5.5, in good agreement with thin film band structure calculations.",
keywords = "SCATTERING, THIN-FILMS, MAGNETORESISTANCE, FERROMAGNETS, RESISTANCE, ANISOTROPY, ORIGIN",
author = "A. Aziz and Bending, {S. J.} and Roberts, {H. G.} and S. Crampin and Heard, {P. J.} and Marrows, {C. H.}",
note = "{\textcopyright} 2006 The American Physical Society",
year = "2006",
month = nov,
day = "17",
doi = "10.1103/PhysRevLett.97.206602",
language = "English",
volume = "97",
journal = "Physical review letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "20",

}

RIS

TY - JOUR

T1 - Angular dependence of domain wall resistivity in artificial magnetic domain structures

AU - Aziz, A.

AU - Bending, S. J.

AU - Roberts, H. G.

AU - Crampin, S.

AU - Heard, P. J.

AU - Marrows, C. H.

N1 - © 2006 The American Physical Society

PY - 2006/11/17

Y1 - 2006/11/17

N2 - We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho(down arrow)/rho(up arrow)similar to 5.5, in good agreement with thin film band structure calculations.

AB - We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho(down arrow)/rho(up arrow)similar to 5.5, in good agreement with thin film band structure calculations.

KW - SCATTERING

KW - THIN-FILMS

KW - MAGNETORESISTANCE

KW - FERROMAGNETS

KW - RESISTANCE

KW - ANISOTROPY

KW - ORIGIN

U2 - 10.1103/PhysRevLett.97.206602

DO - 10.1103/PhysRevLett.97.206602

M3 - Journal article

VL - 97

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

IS - 20

M1 - 206602

ER -