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Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. / Marshall, Andrew Robert Julian; Vines, Peter; Ker, Pin Jern et al.
In: IEEE Journal of Quantum Electronics, Vol. 47, No. 6, 06.2011, p. 858-864.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Marshall, ARJ, Vines, P, Ker, PJ, David, JPR & Tan, CH 2011, 'Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K', IEEE Journal of Quantum Electronics, vol. 47, no. 6, pp. 858-864. https://doi.org/10.1109/JQE.2011.2128299

APA

Marshall, A. R. J., Vines, P., Ker, P. J., David, J. P. R., & Tan, C. H. (2011). Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. IEEE Journal of Quantum Electronics, 47(6), 858-864. https://doi.org/10.1109/JQE.2011.2128299

Vancouver

Marshall ARJ, Vines P, Ker PJ, David JPR, Tan CH. Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. IEEE Journal of Quantum Electronics. 2011 Jun;47(6):858-864. doi: 10.1109/JQE.2011.2128299

Author

Marshall, Andrew Robert Julian ; Vines, Peter ; Ker, Pin Jern et al. / Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. In: IEEE Journal of Quantum Electronics. 2011 ; Vol. 47, No. 6. pp. 858-864.

Bibtex

@article{3631c876b31741169aa6b5979ab856cc,
title = "Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K",
abstract = "The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.",
keywords = "Avalanche photodiode , InAs , MWIR , SWIR , electron-avalanche photodiode , impact ionization , ionization coefficient",
author = "Marshall, {Andrew Robert Julian} and Peter Vines and Ker, {Pin Jern} and David, {John P. R.} and Tan, {Chee Hing}",
year = "2011",
month = jun,
doi = "10.1109/JQE.2011.2128299",
language = "English",
volume = "47",
pages = "858--864",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

AU - Marshall, Andrew Robert Julian

AU - Vines, Peter

AU - Ker, Pin Jern

AU - David, John P. R.

AU - Tan, Chee Hing

PY - 2011/6

Y1 - 2011/6

N2 - The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.

AB - The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.

KW - Avalanche photodiode

KW - InAs

KW - MWIR

KW - SWIR

KW - electron-avalanche photodiode

KW - impact ionization

KW - ionization coefficient

U2 - 10.1109/JQE.2011.2128299

DO - 10.1109/JQE.2011.2128299

M3 - Journal article

VL - 47

SP - 858

EP - 864

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 6

ER -