Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K
AU - Marshall, Andrew Robert Julian
AU - Vines, Peter
AU - Ker, Pin Jern
AU - David, John P. R.
AU - Tan, Chee Hing
PY - 2011/6
Y1 - 2011/6
N2 - The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.
AB - The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.
KW - Avalanche photodiode
KW - InAs
KW - MWIR
KW - SWIR
KW - electron-avalanche photodiode
KW - impact ionization
KW - ionization coefficient
U2 - 10.1109/JQE.2011.2128299
DO - 10.1109/JQE.2011.2128299
M3 - Journal article
VL - 47
SP - 858
EP - 864
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 6
ER -