Home > Research > Publications & Outputs > Ballistic transport effects in a sub-micron InS...
View graph of relations

Ballistic transport effects in a sub-micron InSb quantum well cross structure

Research output: Contribution to journalJournal article

Published
Close
<mark>Journal publication date</mark>2011
<mark>Journal</mark>AIP Conference Proceedings
Volume1399
Number of pages2
Pages (from-to)325-326
Publication statusPublished
Early online date23/12/11
Original languageEnglish
Event30th International Conference on the Physics of Semiconductors (ICPS-30) - Seoul, United Kingdom
Duration: 25/07/201030/07/2010

Conference

Conference30th International Conference on the Physics of Semiconductors (ICPS-30)
CountryUnited Kingdom
Period25/07/1030/07/10

Abstract

We report the low temperature magnetoresistance properties of an InSb quantum well sub-micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance. The use of such devices as high spatial resolution low field sensors is addressed.