Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Ballistic transport effects in a sub-micron InSb quantum well cross structure
AU - Gilbertson, A. M.
AU - Fearn, M.
AU - Kormanyos, A.
AU - Read, D. E.
AU - Lambert, C. J.
AU - Buckle, L.
AU - Ashley, T.
AU - Solin, S. A.
AU - Cohen, L. F.
PY - 2011
Y1 - 2011
N2 - We report the low temperature magnetoresistance properties of an InSb quantum well sub-micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance. The use of such devices as high spatial resolution low field sensors is addressed.
AB - We report the low temperature magnetoresistance properties of an InSb quantum well sub-micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance. The use of such devices as high spatial resolution low field sensors is addressed.
KW - Ballistic transport
KW - InSb
KW - quantum well
U2 - 10.1063/1.3666385
DO - 10.1063/1.3666385
M3 - Journal article
VL - 1399
SP - 325
EP - 326
JO - AIP Conference Proceedings
JF - AIP Conference Proceedings
SN - 0094-243X
T2 - 30th International Conference on the Physics of Semiconductors (ICPS-30)
Y2 - 25 July 2010 through 30 July 2010
ER -