Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 2011 |
|---|---|
| <mark>Journal</mark> | AIP Conference Proceedings |
| Volume | 1399 |
| Number of pages | 2 |
| Pages (from-to) | 325-326 |
| Publication Status | Published |
| Early online date | 23/12/11 |
| <mark>Original language</mark> | English |
| Event | 30th International Conference on the Physics of Semiconductors (ICPS-30) - Seoul, United Kingdom Duration: 25/07/2010 → 30/07/2010 |
| Conference | 30th International Conference on the Physics of Semiconductors (ICPS-30) |
|---|---|
| Country/Territory | United Kingdom |
| Period | 25/07/10 → 30/07/10 |
We report the low temperature magnetoresistance properties of an InSb quantum well sub-micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance. The use of such devices as high spatial resolution low field sensors is addressed.