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Charge transfer between epitaxial graphene and silicon carbide

Research output: Contribution to journalJournal article

Published

Article number112109
Journal publication date13/09/2010
JournalApplied Physics Letters
Journal number11
Volume97
Number of pages3
Original languageEnglish

Abstract

We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates. (c) 2010 American Institute of Physics. [doi:10.1063/1.3487782]