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Charge transfer between epitaxial graphene and silicon carbide

Research output: Contribution to journalJournal article

Article number112109
<mark>Journal publication date</mark>13/09/2010
<mark>Journal</mark>Applied Physics Letters
Issue number11
Number of pages3
<mark>Original language</mark>English


We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates. (c) 2010 American Institute of Physics. [doi:10.1063/1.3487782]