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Charge transfer between epitaxial graphene and silicon carbide

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Charge transfer between epitaxial graphene and silicon carbide. / Kopylov, Sergey; Tzalenchuk, Alexander; Kubatkin, Sergey et al.
In: Applied Physics Letters, Vol. 97, No. 11, 112109, 13.09.2010.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kopylov, S, Tzalenchuk, A, Kubatkin, S & Falko, V 2010, 'Charge transfer between epitaxial graphene and silicon carbide', Applied Physics Letters, vol. 97, no. 11, 112109. https://doi.org/10.1063/1.3487782

APA

Kopylov, S., Tzalenchuk, A., Kubatkin, S., & Falko, V. (2010). Charge transfer between epitaxial graphene and silicon carbide. Applied Physics Letters, 97(11), Article 112109. https://doi.org/10.1063/1.3487782

Vancouver

Kopylov S, Tzalenchuk A, Kubatkin S, Falko V. Charge transfer between epitaxial graphene and silicon carbide. Applied Physics Letters. 2010 Sept 13;97(11):112109. doi: 10.1063/1.3487782

Author

Kopylov, Sergey ; Tzalenchuk, Alexander ; Kubatkin, Sergey et al. / Charge transfer between epitaxial graphene and silicon carbide. In: Applied Physics Letters. 2010 ; Vol. 97, No. 11.

Bibtex

@article{a3b7fde1d7104f659418c9eaa25988ad,
title = "Charge transfer between epitaxial graphene and silicon carbide",
abstract = "We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates. (c) 2010 American Institute of Physics. [doi:10.1063/1.3487782]",
author = "Sergey Kopylov and Alexander Tzalenchuk and Sergey Kubatkin and Vladimir Falko",
year = "2010",
month = sep,
day = "13",
doi = "10.1063/1.3487782",
language = "English",
volume = "97",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "11",

}

RIS

TY - JOUR

T1 - Charge transfer between epitaxial graphene and silicon carbide

AU - Kopylov, Sergey

AU - Tzalenchuk, Alexander

AU - Kubatkin, Sergey

AU - Falko, Vladimir

PY - 2010/9/13

Y1 - 2010/9/13

N2 - We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates. (c) 2010 American Institute of Physics. [doi:10.1063/1.3487782]

AB - We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates. (c) 2010 American Institute of Physics. [doi:10.1063/1.3487782]

U2 - 10.1063/1.3487782

DO - 10.1063/1.3487782

M3 - Journal article

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 112109

ER -