Research output: Contribution to Journal/Magazine › Journal article › peer-review
| Article number | 112109 |
|---|---|
| <mark>Journal publication date</mark> | 13/09/2010 |
| <mark>Journal</mark> | Applied Physics Letters |
| Issue number | 11 |
| Volume | 97 |
| Number of pages | 3 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates. (c) 2010 American Institute of Physics. [doi:10.1063/1.3487782]