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Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707

Research output: Contribution in Book/Report/ProceedingsConference contribution

Published

Publication date2006
Host publicationTechnologies for Optical Countermeasures III
EditorsDH Titterton
Place of publicationBELLINGHAM
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Pages39707-39707
Number of pages6
ISBN (Print)978-0-8194-6495-8
Original languageEnglish

Conference

ConferenceConference on Technologies for Optical Countermeasures III
CityStockholm
Period12/09/0613/09/06

Conference

ConferenceConference on Technologies for Optical Countermeasures III
CityStockholm
Period12/09/0613/09/06

Abstract

We report on the liquid phase epitaxy (LPE) growth of an optimized double heterostructure (DH) 3-4 mu m laser and the use of linear rapid slider boat technology for the production of quantum well (QW) structures based on InAsSb/InAsSbP. Typical characteristics of some of these prototype sources are presented and analyzed, including the results of SEM, X-ray diffraction, photo- and electro- luminescence characteristics of prototype DH & QW devices. The optimized 5 epi-layer diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m at 170 K with a threshold current density as low as 118 A/cm(2) at 85 K. Coherent emission was obtained up to 210 K. LPE growth of InAsSb QW has been successfully obtained experimentally. The QW structure has been confirmed by SEM and electroluminescence measurements at different temperatures.