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Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707

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Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707. / Yin, M.; Krier, A.; Jones, Robert et al.
Technologies for Optical Countermeasures III. ed. / DH Titterton. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, 2006. p. 39707-39707.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Yin, M, Krier, A, Jones, R, Krier, S & Campbell, D 2006, Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707. in DH Titterton (ed.), Technologies for Optical Countermeasures III. SPIE-INT SOC OPTICAL ENGINEERING, BELLINGHAM, pp. 39707-39707, Conference on Technologies for Optical Countermeasures III, Stockholm, 12/09/06. https://doi.org/10.1117/12.688254

APA

Yin, M., Krier, A., Jones, R., Krier, S., & Campbell, D. (2006). Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707. In DH. Titterton (Ed.), Technologies for Optical Countermeasures III (pp. 39707-39707). SPIE-INT SOC OPTICAL ENGINEERING. https://doi.org/10.1117/12.688254

Vancouver

Yin M, Krier A, Jones R, Krier S, Campbell D. Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707. In Titterton DH, editor, Technologies for Optical Countermeasures III. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING. 2006. p. 39707-39707 doi: 10.1117/12.688254

Author

Yin, M. ; Krier, A. ; Jones, Robert et al. / Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707. Technologies for Optical Countermeasures III. editor / DH Titterton. BELLINGHAM : SPIE-INT SOC OPTICAL ENGINEERING, 2006. pp. 39707-39707

Bibtex

@inproceedings{14b2ab2eb5c84055b8ccc3d690be37ec,
title = "Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707",
abstract = "We report on the liquid phase epitaxy (LPE) growth of an optimized double heterostructure (DH) 3-4 mu m laser and the use of linear rapid slider boat technology for the production of quantum well (QW) structures based on InAsSb/InAsSbP. Typical characteristics of some of these prototype sources are presented and analyzed, including the results of SEM, X-ray diffraction, photo- and electro- luminescence characteristics of prototype DH & QW devices. The optimized 5 epi-layer diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m at 170 K with a threshold current density as low as 118 A/cm(2) at 85 K. Coherent emission was obtained up to 210 K. LPE growth of InAsSb QW has been successfully obtained experimentally. The QW structure has been confirmed by SEM and electroluminescence measurements at different temperatures.",
author = "M. Yin and A. Krier and Robert Jones and S. Krier and D. Campbell",
year = "2006",
doi = "10.1117/12.688254",
language = "English",
isbn = "978-0-8194-6495-8",
pages = "39707--39707",
editor = "DH Titterton",
booktitle = "Technologies for Optical Countermeasures III",
publisher = "SPIE-INT SOC OPTICAL ENGINEERING",
note = "Conference on Technologies for Optical Countermeasures III ; Conference date: 12-09-2006 Through 13-09-2006",

}

RIS

TY - GEN

T1 - Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707

AU - Yin, M.

AU - Krier, A.

AU - Jones, Robert

AU - Krier, S.

AU - Campbell, D.

PY - 2006

Y1 - 2006

N2 - We report on the liquid phase epitaxy (LPE) growth of an optimized double heterostructure (DH) 3-4 mu m laser and the use of linear rapid slider boat technology for the production of quantum well (QW) structures based on InAsSb/InAsSbP. Typical characteristics of some of these prototype sources are presented and analyzed, including the results of SEM, X-ray diffraction, photo- and electro- luminescence characteristics of prototype DH & QW devices. The optimized 5 epi-layer diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m at 170 K with a threshold current density as low as 118 A/cm(2) at 85 K. Coherent emission was obtained up to 210 K. LPE growth of InAsSb QW has been successfully obtained experimentally. The QW structure has been confirmed by SEM and electroluminescence measurements at different temperatures.

AB - We report on the liquid phase epitaxy (LPE) growth of an optimized double heterostructure (DH) 3-4 mu m laser and the use of linear rapid slider boat technology for the production of quantum well (QW) structures based on InAsSb/InAsSbP. Typical characteristics of some of these prototype sources are presented and analyzed, including the results of SEM, X-ray diffraction, photo- and electro- luminescence characteristics of prototype DH & QW devices. The optimized 5 epi-layer diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m at 170 K with a threshold current density as low as 118 A/cm(2) at 85 K. Coherent emission was obtained up to 210 K. LPE growth of InAsSb QW has been successfully obtained experimentally. The QW structure has been confirmed by SEM and electroluminescence measurements at different temperatures.

U2 - 10.1117/12.688254

DO - 10.1117/12.688254

M3 - Conference contribution/Paper

SN - 978-0-8194-6495-8

SP - 39707

EP - 39707

BT - Technologies for Optical Countermeasures III

A2 - Titterton, DH

PB - SPIE-INT SOC OPTICAL ENGINEERING

CY - BELLINGHAM

T2 - Conference on Technologies for Optical Countermeasures III

Y2 - 12 September 2006 through 13 September 2006

ER -