12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Direct evidence for suppression of Auger recomb...
View graph of relations

« Back

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Research output: Contribution to journalJournal article

Published

  • K. J. Cheetham
  • A. Krier
  • I. P. Marko
  • A. Aldukhayel
  • S. J. Sweeney
???articleNumber???141110
Journal publication date3/10/2011
JournalApplied Physics Letters
Journal number14
Volume99
Number of pages3
Pages-
Original languageEnglish

Abstract

Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been engineered to provide a favourable band structure for the suppression of non-radiative Auger recombination which is dominant in narrow band gap III-V materials. Hydrostatic pressure measurements at room temperature and at 100 K were used to tune the band gap towards resonance with the spin-orbit band gap. Analysis of the resulting electroluminescence confirms that the non-radiative Auger recombination process involving the spin-orbit-split-off-band is suppressed under ambient conditions.