Research output: Contribution to Journal/Magazine › Journal article › peer-review
Article number | 141110 |
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<mark>Journal publication date</mark> | 3/10/2011 |
<mark>Journal</mark> | Applied Physics Letters |
Issue number | 14 |
Volume | 99 |
Number of pages | 3 |
Pages (from-to) | - |
Publication Status | Published |
<mark>Original language</mark> | English |
Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been engineered to provide a favourable band structure for the suppression of non-radiative Auger recombination which is dominant in narrow band gap III-V materials. Hydrostatic pressure measurements at room temperature and at 100 K were used to tune the band gap towards resonance with the spin-orbit band gap. Analysis of the resulting electroluminescence confirms that the non-radiative Auger recombination process involving the spin-orbit-split-off-band is suppressed under ambient conditions.