Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes
AU - Cheetham, K. J.
AU - Krier, A.
AU - Marko, I. P.
AU - Aldukhayel, A.
AU - Sweeney, S. J.
PY - 2011/10/3
Y1 - 2011/10/3
N2 - Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been engineered to provide a favourable band structure for the suppression of non-radiative Auger recombination which is dominant in narrow band gap III-V materials. Hydrostatic pressure measurements at room temperature and at 100 K were used to tune the band gap towards resonance with the spin-orbit band gap. Analysis of the resulting electroluminescence confirms that the non-radiative Auger recombination process involving the spin-orbit-split-off-band is suppressed under ambient conditions.
AB - Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been engineered to provide a favourable band structure for the suppression of non-radiative Auger recombination which is dominant in narrow band gap III-V materials. Hydrostatic pressure measurements at room temperature and at 100 K were used to tune the band gap towards resonance with the spin-orbit band gap. Analysis of the resulting electroluminescence confirms that the non-radiative Auger recombination process involving the spin-orbit-split-off-band is suppressed under ambient conditions.
U2 - 10.1063/1.3646910
DO - 10.1063/1.3646910
M3 - Journal article
VL - 99
SP - -
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 141110
ER -