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Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

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Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells. / Fernández-Delgado, N.; Herrera, M.; Molina, S. I. et al.
In: Applied Surface Science, Vol. 359, 30.12.2015, p. 676-678.

Research output: Contribution to Journal/MagazineLetterpeer-review

Harvard

Fernández-Delgado, N, Herrera, M, Molina, SI, Castro, C, Duguay, S, James, JS & Krier, A 2015, 'Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells', Applied Surface Science, vol. 359, pp. 676-678. https://doi.org/10.1016/j.apsusc.2015.10.161

APA

Fernández-Delgado, N., Herrera, M., Molina, S. I., Castro, C., Duguay, S., James, J. S., & Krier, A. (2015). Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells. Applied Surface Science, 359, 676-678. https://doi.org/10.1016/j.apsusc.2015.10.161

Vancouver

Fernández-Delgado N, Herrera M, Molina SI, Castro C, Duguay S, James JS et al. Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells. Applied Surface Science. 2015 Dec 30;359:676-678. Epub 2015 Oct 26. doi: 10.1016/j.apsusc.2015.10.161

Author

Fernández-Delgado, N. ; Herrera, M. ; Molina, S. I. et al. / Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells. In: Applied Surface Science. 2015 ; Vol. 359. pp. 676-678.

Bibtex

@article{8c9a2a895b9e4799ba6c8af53440321a,
title = "Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells",
abstract = "The effect of the introduction of dopants on the morphology of GaSb/GaAs nanostructures is analyzed by HAADF-STEM.1 Our results show the presence of well-developed GaSb QRs2 in both p-doped and n-doped heterostructures. However, in the undoped sample grown under the same conditions such well-developed QRs have not been observed. We found that p-doping with Be stimulates the formation of QRs, whereas n-doping with Te results in the formation of GaSb nanocups. Therefore, the introduction of dopants in the growth of GaSb nanostructures has a significant effect on their morphology.",
keywords = "Electron microscopy, Crystal structure, Epitaxial growth, Thin films, Solar cells",
author = "N. Fern{\'a}ndez-Delgado and M. Herrera and Molina, {S. I.} and C. Castro and Stephanie Duguay and James, {J. S.} and Anthony Krier",
year = "2015",
month = dec,
day = "30",
doi = "10.1016/j.apsusc.2015.10.161",
language = "English",
volume = "359",
pages = "676--678",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

AU - Fernández-Delgado, N.

AU - Herrera, M.

AU - Molina, S. I.

AU - Castro, C.

AU - Duguay, Stephanie

AU - James, J. S.

AU - Krier, Anthony

PY - 2015/12/30

Y1 - 2015/12/30

N2 - The effect of the introduction of dopants on the morphology of GaSb/GaAs nanostructures is analyzed by HAADF-STEM.1 Our results show the presence of well-developed GaSb QRs2 in both p-doped and n-doped heterostructures. However, in the undoped sample grown under the same conditions such well-developed QRs have not been observed. We found that p-doping with Be stimulates the formation of QRs, whereas n-doping with Te results in the formation of GaSb nanocups. Therefore, the introduction of dopants in the growth of GaSb nanostructures has a significant effect on their morphology.

AB - The effect of the introduction of dopants on the morphology of GaSb/GaAs nanostructures is analyzed by HAADF-STEM.1 Our results show the presence of well-developed GaSb QRs2 in both p-doped and n-doped heterostructures. However, in the undoped sample grown under the same conditions such well-developed QRs have not been observed. We found that p-doping with Be stimulates the formation of QRs, whereas n-doping with Te results in the formation of GaSb nanocups. Therefore, the introduction of dopants in the growth of GaSb nanostructures has a significant effect on their morphology.

KW - Electron microscopy

KW - Crystal structure

KW - Epitaxial growth

KW - Thin films

KW - Solar cells

U2 - 10.1016/j.apsusc.2015.10.161

DO - 10.1016/j.apsusc.2015.10.161

M3 - Letter

VL - 359

SP - 676

EP - 678

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -