Final published version
Research output: Contribution to Journal/Magazine › Letter › peer-review
Research output: Contribution to Journal/Magazine › Letter › peer-review
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TY - JOUR
T1 - Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells
AU - Fernández-Delgado, N.
AU - Herrera, M.
AU - Molina, S. I.
AU - Castro, C.
AU - Duguay, Stephanie
AU - James, J. S.
AU - Krier, Anthony
PY - 2015/12/30
Y1 - 2015/12/30
N2 - The effect of the introduction of dopants on the morphology of GaSb/GaAs nanostructures is analyzed by HAADF-STEM.1 Our results show the presence of well-developed GaSb QRs2 in both p-doped and n-doped heterostructures. However, in the undoped sample grown under the same conditions such well-developed QRs have not been observed. We found that p-doping with Be stimulates the formation of QRs, whereas n-doping with Te results in the formation of GaSb nanocups. Therefore, the introduction of dopants in the growth of GaSb nanostructures has a significant effect on their morphology.
AB - The effect of the introduction of dopants on the morphology of GaSb/GaAs nanostructures is analyzed by HAADF-STEM.1 Our results show the presence of well-developed GaSb QRs2 in both p-doped and n-doped heterostructures. However, in the undoped sample grown under the same conditions such well-developed QRs have not been observed. We found that p-doping with Be stimulates the formation of QRs, whereas n-doping with Te results in the formation of GaSb nanocups. Therefore, the introduction of dopants in the growth of GaSb nanostructures has a significant effect on their morphology.
KW - Electron microscopy
KW - Crystal structure
KW - Epitaxial growth
KW - Thin films
KW - Solar cells
U2 - 10.1016/j.apsusc.2015.10.161
DO - 10.1016/j.apsusc.2015.10.161
M3 - Letter
VL - 359
SP - 676
EP - 678
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -