Home > Research > Publications & Outputs > Effect of doping on the morphology of GaSb/GaAs...


Text available via DOI:

View graph of relations

Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

Research output: Contribution to Journal/MagazineLetterpeer-review

  • N. Fernández-Delgado
  • M. Herrera
  • S. I. Molina
  • C. Castro
  • Stephanie Duguay
  • J. S. James
  • Anthony Krier
<mark>Journal publication date</mark>30/12/2015
<mark>Journal</mark>Applied Surface Science
Number of pages3
Pages (from-to)676-678
Publication StatusPublished
Early online date26/10/15
<mark>Original language</mark>English


The effect of the introduction of dopants on the morphology of GaSb/GaAs nanostructures is analyzed by HAADF-STEM.1 Our results show the presence of well-developed GaSb QRs2 in both p-doped and n-doped heterostructures. However, in the undoped sample grown under the same conditions such well-developed QRs have not been observed. We found that p-doping with Be stimulates the formation of QRs, whereas n-doping with Te results in the formation of GaSb nanocups. Therefore, the introduction of dopants in the growth of GaSb nanostructures has a significant effect on their morphology.