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Excess noise and avalanche multiplication in InAlAs

Research output: Contribution in Book/Report/ProceedingsConference contribution

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Publication date2006
Host publication2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2
Place of publicationNew York
PublisherIEEE
Pages787-788
Number of pages2
ISBN (Print)978-0-7803-9555-8
Original languageEnglish

Conference

Conference19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
CityMontreal
Period29/10/062/11/06

Conference

Conference19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
CityMontreal
Period29/10/062/11/06

Abstract

We present a systematic study of avalanche multiplication and excess noise characteristics of InAlAs on a series of p+-i-n + and n+-i-p+ diodes with nominal intrinsic region widths from 0.1mum to 2.5mum. The carrier threshold energies and the ionization coefficient for enabled carriers between electric fields of 220 ky/cm to 980 ky/cm are extracted by fitting to the measured electron- and hole-initiated multiplication and excess noise characteristics by using the coupled integral equations technique.