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Excess noise and avalanche multiplication in InAlAs

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Excess noise and avalanche multiplication in InAlAs. / Goh, Y. L.; Massey, D. J.; Marshall, A. R. J. et al.
2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York: IEEE, 2006. p. 787-788.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Goh, YL, Massey, DJ, Marshall, ARJ, Ng, JS, Tan, CH, Hopkinson, M & David, JPR 2006, Excess noise and avalanche multiplication in InAlAs. in 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. IEEE, New York, pp. 787-788, 19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, Montreal, 29/10/06. https://doi.org/10.1109/LEOS.2006.279003

APA

Goh, Y. L., Massey, D. J., Marshall, A. R. J., Ng, J. S., Tan, C. H., Hopkinson, M., & David, J. P. R. (2006). Excess noise and avalanche multiplication in InAlAs. In 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp. 787-788). IEEE. https://doi.org/10.1109/LEOS.2006.279003

Vancouver

Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M et al. Excess noise and avalanche multiplication in InAlAs. In 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York: IEEE. 2006. p. 787-788 doi: 10.1109/LEOS.2006.279003

Author

Goh, Y. L. ; Massey, D. J. ; Marshall, A. R. J. et al. / Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York : IEEE, 2006. pp. 787-788

Bibtex

@inproceedings{fa0efb94206e463e9fd726301bec8456,
title = "Excess noise and avalanche multiplication in InAlAs",
abstract = "We present a systematic study of avalanche multiplication and excess noise characteristics of InAlAs on a series of p+-i-n + and n+-i-p+ diodes with nominal intrinsic region widths from 0.1mum to 2.5mum. The carrier threshold energies and the ionization coefficient for enabled carriers between electric fields of 220 ky/cm to 980 ky/cm are extracted by fitting to the measured electron- and hole-initiated multiplication and excess noise characteristics by using the coupled integral equations technique.",
author = "Goh, {Y. L.} and Massey, {D. J.} and Marshall, {A. R. J.} and Ng, {J. S.} and Tan, {C. H.} and M. Hopkinson and David, {J. P. R.}",
year = "2006",
doi = "10.1109/LEOS.2006.279003",
language = "English",
isbn = "978-0-7803-9555-8",
pages = "787--788",
booktitle = "2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2",
publisher = "IEEE",
note = "19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society ; Conference date: 29-10-2006 Through 02-11-2006",

}

RIS

TY - GEN

T1 - Excess noise and avalanche multiplication in InAlAs

AU - Goh, Y. L.

AU - Massey, D. J.

AU - Marshall, A. R. J.

AU - Ng, J. S.

AU - Tan, C. H.

AU - Hopkinson, M.

AU - David, J. P. R.

PY - 2006

Y1 - 2006

N2 - We present a systematic study of avalanche multiplication and excess noise characteristics of InAlAs on a series of p+-i-n + and n+-i-p+ diodes with nominal intrinsic region widths from 0.1mum to 2.5mum. The carrier threshold energies and the ionization coefficient for enabled carriers between electric fields of 220 ky/cm to 980 ky/cm are extracted by fitting to the measured electron- and hole-initiated multiplication and excess noise characteristics by using the coupled integral equations technique.

AB - We present a systematic study of avalanche multiplication and excess noise characteristics of InAlAs on a series of p+-i-n + and n+-i-p+ diodes with nominal intrinsic region widths from 0.1mum to 2.5mum. The carrier threshold energies and the ionization coefficient for enabled carriers between electric fields of 220 ky/cm to 980 ky/cm are extracted by fitting to the measured electron- and hole-initiated multiplication and excess noise characteristics by using the coupled integral equations technique.

U2 - 10.1109/LEOS.2006.279003

DO - 10.1109/LEOS.2006.279003

M3 - Conference contribution/Paper

SN - 978-0-7803-9555-8

SP - 787

EP - 788

BT - 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2

PB - IEEE

CY - New York

T2 - 19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society

Y2 - 29 October 2006 through 2 November 2006

ER -