Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
}
TY - GEN
T1 - Excess noise and avalanche multiplication in InAlAs
AU - Goh, Y. L.
AU - Massey, D. J.
AU - Marshall, A. R. J.
AU - Ng, J. S.
AU - Tan, C. H.
AU - Hopkinson, M.
AU - David, J. P. R.
PY - 2006
Y1 - 2006
N2 - We present a systematic study of avalanche multiplication and excess noise characteristics of InAlAs on a series of p+-i-n + and n+-i-p+ diodes with nominal intrinsic region widths from 0.1mum to 2.5mum. The carrier threshold energies and the ionization coefficient for enabled carriers between electric fields of 220 ky/cm to 980 ky/cm are extracted by fitting to the measured electron- and hole-initiated multiplication and excess noise characteristics by using the coupled integral equations technique.
AB - We present a systematic study of avalanche multiplication and excess noise characteristics of InAlAs on a series of p+-i-n + and n+-i-p+ diodes with nominal intrinsic region widths from 0.1mum to 2.5mum. The carrier threshold energies and the ionization coefficient for enabled carriers between electric fields of 220 ky/cm to 980 ky/cm are extracted by fitting to the measured electron- and hole-initiated multiplication and excess noise characteristics by using the coupled integral equations technique.
U2 - 10.1109/LEOS.2006.279003
DO - 10.1109/LEOS.2006.279003
M3 - Conference contribution/Paper
SN - 978-0-7803-9555-8
SP - 787
EP - 788
BT - 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2
PB - IEEE
CY - New York
T2 - 19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
Y2 - 29 October 2006 through 2 November 2006
ER -