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    Rights statement: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106, 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922590.

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Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

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Published
Article number232105
<mark>Journal publication date</mark>10/06/2015
<mark>Journal</mark>Applied Physics Letters
Volume106
Number of pages4
Publication statusPublished
Original languageEnglish

Abstract

Extended wavelength photoluminescence emission within the technologically important 2–5 micrometer spectral range has been demonstrated from InAs1xNx and In1yGayAs1xNx type I quantum wells grown onto InP. Samples containing N 1% and 2% exhibited 4K photoluminescence emission at 2.0 and 2.7 lm, respectively. The emission wavelength was extended out to 2.9 lm (3.3 lm at
300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to room
temperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.

Bibliographic note

Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106, 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922590.