Rights statement: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106, 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922590.
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP
AU - Wheatley, Robert
AU - Kesaria, Manoj
AU - Mwast, L.J
AU - Kirch, J.D.
AU - Kuech, T.F.
AU - Marshall, Andrew
AU - Zhuang, Qiandong
AU - Krier, Anthony
N1 - Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106, 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922590.
PY - 2015/6/10
Y1 - 2015/6/10
N2 - Extended wavelength photoluminescence emission within the technologically important 2–5 micrometer spectral range has been demonstrated from InAs1xNx and In1yGayAs1xNx type I quantum wells grown onto InP. Samples containing N 1% and 2% exhibited 4K photoluminescence emission at 2.0 and 2.7 lm, respectively. The emission wavelength was extended out to 2.9 lm (3.3 lm at300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to roomtemperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.
AB - Extended wavelength photoluminescence emission within the technologically important 2–5 micrometer spectral range has been demonstrated from InAs1xNx and In1yGayAs1xNx type I quantum wells grown onto InP. Samples containing N 1% and 2% exhibited 4K photoluminescence emission at 2.0 and 2.7 lm, respectively. The emission wavelength was extended out to 2.9 lm (3.3 lm at300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to roomtemperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.
U2 - 10.1063/1.4922590
DO - 10.1063/1.4922590
M3 - Journal article
VL - 106
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
M1 - 232105
ER -