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Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

Research output: Contribution to journalJournal article

Published

Journal publication date1/07/2009
JournalIeee photonics technology letters
Journal number13
Volume21
Number of pages3
Pages866-868
Original languageEnglish

Abstract

Measurements of the avalanche multiplication noise in InAs p-i-n and n-i-p diodes at room temperature demonstrate unambiguously that the avalanche multiplication process is dominated by impact ionization of electrons. This results in the excess noise factor for electron initiated multiplication asymptotically approaching a maximum value just less than two and becoming virtually gain-independent for higher gains. Measurements for predominantly hole initiated multiplication show corresponding high excess noise factors suggesting the electron to hole ionization coefficient ratios are comparable to those reported for Hg1-xCdxTe electron avalanche photodiodes.