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Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes. / Marshall, Andrew R. J.; Tan, Chee Hing; Steer, Mathew J. et al.
In: IEEE Photonics Technology Letters, Vol. 21, No. 13, 01.07.2009, p. 866-868.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Marshall, ARJ, Tan, CH, Steer, MJ & David, JPR 2009, 'Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes', IEEE Photonics Technology Letters, vol. 21, no. 13, pp. 866-868. https://doi.org/10.1109/LPT.2009.2019625

APA

Marshall, A. R. J., Tan, C. H., Steer, M. J., & David, J. P. R. (2009). Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes. IEEE Photonics Technology Letters, 21(13), 866-868. https://doi.org/10.1109/LPT.2009.2019625

Vancouver

Marshall ARJ, Tan CH, Steer MJ, David JPR. Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes. IEEE Photonics Technology Letters. 2009 Jul 1;21(13):866-868. doi: 10.1109/LPT.2009.2019625

Author

Marshall, Andrew R. J. ; Tan, Chee Hing ; Steer, Mathew J. et al. / Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes. In: IEEE Photonics Technology Letters. 2009 ; Vol. 21, No. 13. pp. 866-868.

Bibtex

@article{bcc074921d184733982491f4a57641b3,
title = "Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes",
abstract = "Measurements of the avalanche multiplication noise in InAs p-i-n and n-i-p diodes at room temperature demonstrate unambiguously that the avalanche multiplication process is dominated by impact ionization of electrons. This results in the excess noise factor for electron initiated multiplication asymptotically approaching a maximum value just less than two and becoming virtually gain-independent for higher gains. Measurements for predominantly hole initiated multiplication show corresponding high excess noise factors suggesting the electron to hole ionization coefficient ratios are comparable to those reported for Hg1-xCdxTe electron avalanche photodiodes.",
keywords = "Avalanche photodiodes (APDs) , impact ionization",
author = "Marshall, {Andrew R. J.} and Tan, {Chee Hing} and Steer, {Mathew J.} and David, {John P. R.}",
year = "2009",
month = jul,
day = "1",
doi = "10.1109/LPT.2009.2019625",
language = "English",
volume = "21",
pages = "866--868",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "13",

}

RIS

TY - JOUR

T1 - Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

AU - Marshall, Andrew R. J.

AU - Tan, Chee Hing

AU - Steer, Mathew J.

AU - David, John P. R.

PY - 2009/7/1

Y1 - 2009/7/1

N2 - Measurements of the avalanche multiplication noise in InAs p-i-n and n-i-p diodes at room temperature demonstrate unambiguously that the avalanche multiplication process is dominated by impact ionization of electrons. This results in the excess noise factor for electron initiated multiplication asymptotically approaching a maximum value just less than two and becoming virtually gain-independent for higher gains. Measurements for predominantly hole initiated multiplication show corresponding high excess noise factors suggesting the electron to hole ionization coefficient ratios are comparable to those reported for Hg1-xCdxTe electron avalanche photodiodes.

AB - Measurements of the avalanche multiplication noise in InAs p-i-n and n-i-p diodes at room temperature demonstrate unambiguously that the avalanche multiplication process is dominated by impact ionization of electrons. This results in the excess noise factor for electron initiated multiplication asymptotically approaching a maximum value just less than two and becoming virtually gain-independent for higher gains. Measurements for predominantly hole initiated multiplication show corresponding high excess noise factors suggesting the electron to hole ionization coefficient ratios are comparable to those reported for Hg1-xCdxTe electron avalanche photodiodes.

KW - Avalanche photodiodes (APDs)

KW - impact ionization

U2 - 10.1109/LPT.2009.2019625

DO - 10.1109/LPT.2009.2019625

M3 - Journal article

VL - 21

SP - 866

EP - 868

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 13

ER -