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  • 1510.06288v1

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Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides

Research output: Contribution to journalJournal article

Published
Article number6000105
<mark>Journal publication date</mark>01/2017
<mark>Journal</mark>IEEE Journal of Selected Topics in Quantum Electronics
Issue number1
Volume23
Number of pages5
Publication statusPublished
Early online date15/06/16
Original languageEnglish

Abstract

We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS2, MoSe2, WS2, and WSe2, we find that, due to the polar coupling of electrons with LO phonons, and the HP phonons lattice deformation potential, the cooling times for hot electrons and holes from excitation energies of several hundred meV are at ps-scale.

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©2016 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.