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Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides. / Danovich, M.; Aleiner, I. L.; Drummond, N. D. et al.
In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 23, No. 1, 6000105, 01.2017.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Danovich, M, Aleiner, IL, Drummond, ND & Fal’ko, VI 2017, 'Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides', IEEE Journal of Selected Topics in Quantum Electronics, vol. 23, no. 1, 6000105. https://doi.org/10.1109/JSTQE.2016.2583059

APA

Danovich, M., Aleiner, I. L., Drummond, N. D., & Fal’ko, V. I. (2017). Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides. IEEE Journal of Selected Topics in Quantum Electronics, 23(1), Article 6000105. https://doi.org/10.1109/JSTQE.2016.2583059

Vancouver

Danovich M, Aleiner IL, Drummond ND, Fal’ko VI. Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides. IEEE Journal of Selected Topics in Quantum Electronics. 2017 Jan;23(1):6000105. Epub 2016 Jun 15. doi: 10.1109/JSTQE.2016.2583059

Author

Danovich, M. ; Aleiner, I. L. ; Drummond, N. D. et al. / Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides. In: IEEE Journal of Selected Topics in Quantum Electronics. 2017 ; Vol. 23, No. 1.

Bibtex

@article{612a4ed3ab3b44bbb518a65da7cf81dd,
title = "Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides",
abstract = "We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS2, MoSe2, WS2, and WSe2, we find that, due to the polar coupling of electrons with LO phonons, and the HP phonons lattice deformation potential, the cooling times for hot electrons and holes from excitation energies of several hundred meV are at ps-scale.",
keywords = "chalcogenide glasses, electron-phonon interactions, hot carriers, molybdenum compounds, monolayers, tungsten compounds, 2D transition metal dichalcogenides, Born effective charges, MoS2, MoSe2, WS2, WSe2, cooling times, excitation energies, fast photoexcited carrier relaxation, homopolar phonon emission, hot electrons, lattice deformation potential, longitudinal optical phonon emission, monolayer transition metal dichalcogenides, polar electron coupling, Charge carrier processes, Couplings, Optical coupling, Optical scattering, Phonons, Stimulated emission, TMDCs, optoelectronics, ultrafast relaxation",
author = "M. Danovich and Aleiner, {I. L.} and Drummond, {N. D.} and Fal{\textquoteright}ko, {V. I.}",
note = "{\textcopyright}2016 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.",
year = "2017",
month = jan,
doi = "10.1109/JSTQE.2016.2583059",
language = "English",
volume = "23",
journal = "IEEE Journal of Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

RIS

TY - JOUR

T1 - Fast relaxation of photo-excited carriers in 2-D transition metal dichalcogenides

AU - Danovich, M.

AU - Aleiner, I. L.

AU - Drummond, N. D.

AU - Fal’ko, V. I.

N1 - ©2016 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 2017/1

Y1 - 2017/1

N2 - We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS2, MoSe2, WS2, and WSe2, we find that, due to the polar coupling of electrons with LO phonons, and the HP phonons lattice deformation potential, the cooling times for hot electrons and holes from excitation energies of several hundred meV are at ps-scale.

AB - We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS2, MoSe2, WS2, and WSe2, we find that, due to the polar coupling of electrons with LO phonons, and the HP phonons lattice deformation potential, the cooling times for hot electrons and holes from excitation energies of several hundred meV are at ps-scale.

KW - chalcogenide glasses

KW - electron-phonon interactions

KW - hot carriers

KW - molybdenum compounds

KW - monolayers

KW - tungsten compounds

KW - 2D transition metal dichalcogenides

KW - Born effective charges

KW - MoS2

KW - MoSe2

KW - WS2

KW - WSe2

KW - cooling times

KW - excitation energies

KW - fast photoexcited carrier relaxation

KW - homopolar phonon emission

KW - hot electrons

KW - lattice deformation potential

KW - longitudinal optical phonon emission

KW - monolayer transition metal dichalcogenides

KW - polar electron coupling

KW - Charge carrier processes

KW - Couplings

KW - Optical coupling

KW - Optical scattering

KW - Phonons

KW - Stimulated emission

KW - TMDCs

KW - optoelectronics

KW - ultrafast relaxation

U2 - 10.1109/JSTQE.2016.2583059

DO - 10.1109/JSTQE.2016.2583059

M3 - Journal article

VL - 23

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 1

M1 - 6000105

ER -