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Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

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Published
<mark>Journal publication date</mark>22/07/2009
<mark>Journal</mark>Applied Physics Letters
Issue number3
Volume95
Pages (from-to)031110
Publication statusPublished
Original languageEnglish

Abstract

We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.

Bibliographic note

Article number: 031110