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Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

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<mark>Journal publication date</mark>22/07/2009
<mark>Journal</mark>Applied Physics Letters
Issue number3
Pages (from-to)031110
<mark>Original language</mark>English


We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.

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Article number: 031110