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Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

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Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range. / de la Mare, M.; Zhuang, Q.; Krier, A. et al.
In: Applied Physics Letters, Vol. 95, No. 3, 22.07.2009, p. 031110.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

de la Mare, M, Zhuang, Q, Krier, A, Patane, A & Dhar, S 2009, 'Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.', Applied Physics Letters, vol. 95, no. 3, pp. 031110. https://doi.org/10.1063/1.3187534

APA

de la Mare, M., Zhuang, Q., Krier, A., Patane, A., & Dhar, S. (2009). Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range. Applied Physics Letters, 95(3), 031110. https://doi.org/10.1063/1.3187534

Vancouver

de la Mare M, Zhuang Q, Krier A, Patane A, Dhar S. Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range. Applied Physics Letters. 2009 Jul 22;95(3):031110. doi: 10.1063/1.3187534

Author

de la Mare, M. ; Zhuang, Q. ; Krier, A. et al. / Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range. In: Applied Physics Letters. 2009 ; Vol. 95, No. 3. pp. 031110.

Bibtex

@article{baf5eb1f6d364cc19bf0b9df3fed963a,
title = "Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.",
abstract = "We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.",
author = "{de la Mare}, M. and Q. Zhuang and A. Krier and A. Patane and S. Dhar",
note = "Article number: 031110",
year = "2009",
month = jul,
day = "22",
doi = "10.1063/1.3187534",
language = "English",
volume = "95",
pages = "031110",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "3",

}

RIS

TY - JOUR

T1 - Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

AU - de la Mare, M.

AU - Zhuang, Q.

AU - Krier, A.

AU - Patane, A.

AU - Dhar, S.

N1 - Article number: 031110

PY - 2009/7/22

Y1 - 2009/7/22

N2 - We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.

AB - We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.

UR - http://www.scopus.com/inward/record.url?scp=67651248200&partnerID=8YFLogxK

U2 - 10.1063/1.3187534

DO - 10.1063/1.3187534

M3 - Journal article

VL - 95

SP - 031110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 3

ER -