Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.
AU - de la Mare, M.
AU - Zhuang, Q.
AU - Krier, A.
AU - Patane, A.
AU - Dhar, S.
N1 - Article number: 031110
PY - 2009/7/22
Y1 - 2009/7/22
N2 - We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.
AB - We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.
UR - http://www.scopus.com/inward/record.url?scp=67651248200&partnerID=8YFLogxK
U2 - 10.1063/1.3187534
DO - 10.1063/1.3187534
M3 - Journal article
VL - 95
SP - 031110
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 1077-3118
IS - 3
ER -