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Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

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@article{7a3480e54585472da9dde7f22bf398bb,
title = "Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon",
abstract = "Silicon photonics has emerged as the most promising technology for next-generation compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonide-based compound semiconductor materials on silicon provides a pathway towards the monolithic integration of new, mid-infrared solid-state light sources and comprehensive photonic circuits on silicon platforms. Such devices have wide-ranging applications in environmental monitoring and medical diagnostics. This paper reports on the realization of a mid-infrared InAsSb light emitting diode directly integrated onto silicon using molecular beam epitaxy. The heteroepitaxial integration of the InAsSb p-i-n device onto silicon was achieved with the use of a novel, antiphase domain-free, GaSb-on-silicon buffer layer. The device exhibited efficient light emission at room temperature, peaking at around 4.5 μm, which corresponds well to the CO2 atmospheric absorption band. An output power of 6 μW and an external quantum efficiency of 0.011{\%} was measured at 300 K. These results demonstrate mid-infrared III-V light emitting diodes can be directly grown on silicon, which is an essential step towards the realization of the next generation, on-chip integrated light sources.",
author = "Evangelia Delli and Hodgson, {Peter David} and {Repiso Menendez}, Eva and Craig, {Adam Patrick} and Jonathan Hayton and Qi Lu and Marshall, {Andrew Robert Julian} and Anthony Krier and Carrington, {Peter James}",
year = "2019",
month = "6",
day = "1",
doi = "10.1109/JPHOT.2019.2911433",
language = "English",
volume = "11",
journal = "IEEE Photonics Journal",
issn = "1943-0655",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

RIS

TY - JOUR

T1 - Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

AU - Delli, Evangelia

AU - Hodgson, Peter David

AU - Repiso Menendez, Eva

AU - Craig, Adam Patrick

AU - Hayton, Jonathan

AU - Lu, Qi

AU - Marshall, Andrew Robert Julian

AU - Krier, Anthony

AU - Carrington, Peter James

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Silicon photonics has emerged as the most promising technology for next-generation compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonide-based compound semiconductor materials on silicon provides a pathway towards the monolithic integration of new, mid-infrared solid-state light sources and comprehensive photonic circuits on silicon platforms. Such devices have wide-ranging applications in environmental monitoring and medical diagnostics. This paper reports on the realization of a mid-infrared InAsSb light emitting diode directly integrated onto silicon using molecular beam epitaxy. The heteroepitaxial integration of the InAsSb p-i-n device onto silicon was achieved with the use of a novel, antiphase domain-free, GaSb-on-silicon buffer layer. The device exhibited efficient light emission at room temperature, peaking at around 4.5 μm, which corresponds well to the CO2 atmospheric absorption band. An output power of 6 μW and an external quantum efficiency of 0.011% was measured at 300 K. These results demonstrate mid-infrared III-V light emitting diodes can be directly grown on silicon, which is an essential step towards the realization of the next generation, on-chip integrated light sources.

AB - Silicon photonics has emerged as the most promising technology for next-generation compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonide-based compound semiconductor materials on silicon provides a pathway towards the monolithic integration of new, mid-infrared solid-state light sources and comprehensive photonic circuits on silicon platforms. Such devices have wide-ranging applications in environmental monitoring and medical diagnostics. This paper reports on the realization of a mid-infrared InAsSb light emitting diode directly integrated onto silicon using molecular beam epitaxy. The heteroepitaxial integration of the InAsSb p-i-n device onto silicon was achieved with the use of a novel, antiphase domain-free, GaSb-on-silicon buffer layer. The device exhibited efficient light emission at room temperature, peaking at around 4.5 μm, which corresponds well to the CO2 atmospheric absorption band. An output power of 6 μW and an external quantum efficiency of 0.011% was measured at 300 K. These results demonstrate mid-infrared III-V light emitting diodes can be directly grown on silicon, which is an essential step towards the realization of the next generation, on-chip integrated light sources.

U2 - 10.1109/JPHOT.2019.2911433

DO - 10.1109/JPHOT.2019.2911433

M3 - Journal article

VL - 11

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

SN - 1943-0655

IS - 3

M1 - 2200608

ER -