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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon
AU - Delli, Evangelia
AU - Hodgson, Peter David
AU - Repiso Menendez, Eva
AU - Craig, Adam Patrick
AU - Hayton, Jonathan
AU - Lu, Qi
AU - Marshall, Andrew Robert Julian
AU - Krier, Anthony
AU - Carrington, Peter James
PY - 2019/6/1
Y1 - 2019/6/1
N2 - Silicon photonics has emerged as the most promising technology for next-generation compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonide-based compound semiconductor materials on silicon provides a pathway towards the monolithic integration of new, mid-infrared solid-state light sources and comprehensive photonic circuits on silicon platforms. Such devices have wide-ranging applications in environmental monitoring and medical diagnostics. This paper reports on the realization of a mid-infrared InAsSb light emitting diode directly integrated onto silicon using molecular beam epitaxy. The heteroepitaxial integration of the InAsSb p-i-n device onto silicon was achieved with the use of a novel, antiphase domain-free, GaSb-on-silicon buffer layer. The device exhibited efficient light emission at room temperature, peaking at around 4.5 μm, which corresponds well to the CO2 atmospheric absorption band. An output power of 6 μW and an external quantum efficiency of 0.011% was measured at 300 K. These results demonstrate mid-infrared III-V light emitting diodes can be directly grown on silicon, which is an essential step towards the realization of the next generation, on-chip integrated light sources.
AB - Silicon photonics has emerged as the most promising technology for next-generation compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonide-based compound semiconductor materials on silicon provides a pathway towards the monolithic integration of new, mid-infrared solid-state light sources and comprehensive photonic circuits on silicon platforms. Such devices have wide-ranging applications in environmental monitoring and medical diagnostics. This paper reports on the realization of a mid-infrared InAsSb light emitting diode directly integrated onto silicon using molecular beam epitaxy. The heteroepitaxial integration of the InAsSb p-i-n device onto silicon was achieved with the use of a novel, antiphase domain-free, GaSb-on-silicon buffer layer. The device exhibited efficient light emission at room temperature, peaking at around 4.5 μm, which corresponds well to the CO2 atmospheric absorption band. An output power of 6 μW and an external quantum efficiency of 0.011% was measured at 300 K. These results demonstrate mid-infrared III-V light emitting diodes can be directly grown on silicon, which is an essential step towards the realization of the next generation, on-chip integrated light sources.
U2 - 10.1109/JPHOT.2019.2911433
DO - 10.1109/JPHOT.2019.2911433
M3 - Journal article
VL - 11
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
SN - 1943-0655
IS - 3
M1 - 2200608
ER -