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Highly-mismatched InAs/InSe heterojunction diodes

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Highly-mismatched InAs/InSe heterojunction diodes. / Velichko, A.V.; Kudrynskyi, Z. R.; Di Paola, D. M.; Makarovsky, Oleg; Kesaria, Manoj; Krier, Anthony; Sandall, I. C.; Tan, Chee Hing; Kovalyuk, Z. D.; Patane, A.

In: Applied Physics Letters, Vol. 109, No. 18, 182115, 2016.

Research output: Contribution to journalJournal article

Harvard

Velichko, AV, Kudrynskyi, ZR, Di Paola, DM, Makarovsky, O, Kesaria, M, Krier, A, Sandall, IC, Tan, CH, Kovalyuk, ZD & Patane, A 2016, 'Highly-mismatched InAs/InSe heterojunction diodes' Applied Physics Letters, vol. 109, no. 18, 182115. https://doi.org/10.1063/1.4967381

APA

Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M., Krier, A., ... Patane, A. (2016). Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18), [182115]. https://doi.org/10.1063/1.4967381

Vancouver

Velichko AV, Kudrynskyi ZR, Di Paola DM, Makarovsky O, Kesaria M, Krier A et al. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters. 2016;109(18). 182115. https://doi.org/10.1063/1.4967381

Author

Velichko, A.V. ; Kudrynskyi, Z. R. ; Di Paola, D. M. ; Makarovsky, Oleg ; Kesaria, Manoj ; Krier, Anthony ; Sandall, I. C. ; Tan, Chee Hing ; Kovalyuk, Z. D. ; Patane, A. / Highly-mismatched InAs/InSe heterojunction diodes. In: Applied Physics Letters. 2016 ; Vol. 109, No. 18.

Bibtex

@article{56e22524814f4eaaa376c2eceb2e53e6,
title = "Highly-mismatched InAs/InSe heterojunction diodes",
abstract = "We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34{\%}) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.",
author = "A.V. Velichko and Kudrynskyi, {Z. R.} and {Di Paola}, {D. M.} and Oleg Makarovsky and Manoj Kesaria and Anthony Krier and Sandall, {I. C.} and Tan, {Chee Hing} and Kovalyuk, {Z. D.} and A. Patane",
year = "2016",
doi = "10.1063/1.4967381",
language = "English",
volume = "109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "18",

}

RIS

TY - JOUR

T1 - Highly-mismatched InAs/InSe heterojunction diodes

AU - Velichko, A.V.

AU - Kudrynskyi, Z. R.

AU - Di Paola, D. M.

AU - Makarovsky, Oleg

AU - Kesaria, Manoj

AU - Krier, Anthony

AU - Sandall, I. C.

AU - Tan, Chee Hing

AU - Kovalyuk, Z. D.

AU - Patane, A.

PY - 2016

Y1 - 2016

N2 - We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

AB - We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

U2 - 10.1063/1.4967381

DO - 10.1063/1.4967381

M3 - Journal article

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 182115

ER -