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Highly-mismatched InAs/InSe heterojunction diodes. / Velichko, A.V.; Kudrynskyi, Z. R.; Di Paola, D. M. et al.
In:
Applied Physics Letters, Vol. 109, No. 18, 182115, 2016.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Harvard
Velichko, AV, Kudrynskyi, ZR, Di Paola, DM, Makarovsky, O
, Kesaria, M, Krier, A, Sandall, IC, Tan, CH, Kovalyuk, ZD & Patane, A 2016, '
Highly-mismatched InAs/InSe heterojunction diodes',
Applied Physics Letters, vol. 109, no. 18, 182115.
https://doi.org/10.1063/1.4967381APA
Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O.
, Kesaria, M., Krier, A., Sandall, I. C., Tan, C. H., Kovalyuk, Z. D., & Patane, A. (2016).
Highly-mismatched InAs/InSe heterojunction diodes.
Applied Physics Letters,
109(18), Article 182115.
https://doi.org/10.1063/1.4967381Vancouver
Author
Bibtex
@article{56e22524814f4eaaa376c2eceb2e53e6,
title = "Highly-mismatched InAs/InSe heterojunction diodes",
abstract = "We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.",
author = "A.V. Velichko and Kudrynskyi, {Z. R.} and {Di Paola}, {D. M.} and Oleg Makarovsky and Manoj Kesaria and Anthony Krier and Sandall, {I. C.} and Tan, {Chee Hing} and Kovalyuk, {Z. D.} and A. Patane",
year = "2016",
doi = "10.1063/1.4967381",
language = "English",
volume = "109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "18",
}
RIS
TY - JOUR
T1 - Highly-mismatched InAs/InSe heterojunction diodes
AU - Velichko, A.V.
AU - Kudrynskyi, Z. R.
AU - Di Paola, D. M.
AU - Makarovsky, Oleg
AU - Kesaria, Manoj
AU - Krier, Anthony
AU - Sandall, I. C.
AU - Tan, Chee Hing
AU - Kovalyuk, Z. D.
AU - Patane, A.
PY - 2016
Y1 - 2016
N2 - We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.
AB - We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.
U2 - 10.1063/1.4967381
DO - 10.1063/1.4967381
M3 - Journal article
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
M1 - 182115
ER -
