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Highly-mismatched InAs/InSe heterojunction diodes

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  • A.V. Velichko
  • Z. R. Kudrynskyi
  • D. M. Di Paola
  • Oleg Makarovsky
  • Manoj Kesaria
  • Anthony Krier
  • I. C. Sandall
  • Chee Hing Tan
  • Z. D. Kovalyuk
  • A. Patane
Article number182115
<mark>Journal publication date</mark>2016
<mark>Journal</mark>Applied Physics Letters
Issue number18
Number of pages4
Publication StatusPublished
Early online date4/11/16
<mark>Original language</mark>English


We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.