Research output: Contribution to journal › Journal article
|<mark>Journal publication date</mark>||7/02/2007|
|<mark>Journal</mark>||Physica Status Solidi C|
|Number of pages||4|
We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k center dot p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. The quaternary alloy InGaAsP capping is studied by magneto-photoluminescence. It is found to induce a better electronic confinement than InP. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.