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InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications

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InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications. / Cornet, Charles; Hayne, Manus; Schliwa, Andrei et al.
In: Physica Status Solidi C, Vol. 4, No. 2, 07.02.2007, p. 458-461.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Cornet, C, Hayne, M, Schliwa, A, Dore, F, Even, J, Bimberg, D, Moshchalkov, VV & Loualiche, S 2007, 'InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications', Physica Status Solidi C, vol. 4, no. 2, pp. 458-461. https://doi.org/10.1002/pssc.200673215

APA

Cornet, C., Hayne, M., Schliwa, A., Dore, F., Even, J., Bimberg, D., Moshchalkov, V. V., & Loualiche, S. (2007). InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications. Physica Status Solidi C, 4(2), 458-461. https://doi.org/10.1002/pssc.200673215

Vancouver

Cornet C, Hayne M, Schliwa A, Dore F, Even J, Bimberg D et al. InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications. Physica Status Solidi C. 2007 Feb 7;4(2):458-461. doi: 10.1002/pssc.200673215

Author

Cornet, Charles ; Hayne, Manus ; Schliwa, Andrei et al. / InAs/InP quantum dots (QD) : From fundamental understanding to coupled QD 1.55 mu m laser applications. In: Physica Status Solidi C. 2007 ; Vol. 4, No. 2. pp. 458-461.

Bibtex

@article{ac487524ed18402b92ae9a26f2f30141,
title = "InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications",
abstract = "We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k center dot p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. The quaternary alloy InGaAsP capping is studied by magneto-photoluminescence. It is found to induce a better electronic confinement than InP. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
keywords = "71.15.−m , 71.70.Gm , 73.21.La , 78.55.Cr , 78.67.Hc , 85.35.Be",
author = "Charles Cornet and Manus Hayne and Andrei Schliwa and Francois Dore and Jacky Even and Dieter Bimberg and Moshchalkov, {Victor V.} and Slimane Loualiche",
year = "2007",
month = feb,
day = "7",
doi = "10.1002/pssc.200673215",
language = "English",
volume = "4",
pages = "458--461",
journal = "Physica Status Solidi C",
issn = "1610-1634",
publisher = "Wiley-VCH Verlag",
number = "2",

}

RIS

TY - JOUR

T1 - InAs/InP quantum dots (QD)

T2 - From fundamental understanding to coupled QD 1.55 mu m laser applications

AU - Cornet, Charles

AU - Hayne, Manus

AU - Schliwa, Andrei

AU - Dore, Francois

AU - Even, Jacky

AU - Bimberg, Dieter

AU - Moshchalkov, Victor V.

AU - Loualiche, Slimane

PY - 2007/2/7

Y1 - 2007/2/7

N2 - We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k center dot p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. The quaternary alloy InGaAsP capping is studied by magneto-photoluminescence. It is found to induce a better electronic confinement than InP. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k center dot p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. The quaternary alloy InGaAsP capping is studied by magneto-photoluminescence. It is found to induce a better electronic confinement than InP. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - 71.15.−m

KW - 71.70.Gm

KW - 73.21.La

KW - 78.55.Cr

KW - 78.67.Hc

KW - 85.35.Be

U2 - 10.1002/pssc.200673215

DO - 10.1002/pssc.200673215

M3 - Journal article

VL - 4

SP - 458

EP - 461

JO - Physica Status Solidi C

JF - Physica Status Solidi C

SN - 1610-1634

IS - 2

ER -