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InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • Charles Cornet
  • Manus Hayne
  • Andrei Schliwa
  • Francois Dore
  • Jacky Even
  • Dieter Bimberg
  • Victor V. Moshchalkov
  • Slimane Loualiche
<mark>Journal publication date</mark>7/02/2007
<mark>Journal</mark>Physica Status Solidi C
Issue number2
Number of pages4
Pages (from-to)458-461
Publication StatusPublished
<mark>Original language</mark>English


We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k center dot p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. The quaternary alloy InGaAsP capping is studied by magneto-photoluminescence. It is found to induce a better electronic confinement than InP. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.