Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - In(AsN) mid-infrared emission enhanced by rapid thermal annealing
AU - Kesaria, Manoj
AU - Birindelli, Simone
AU - A.V. Velichko, A.V.
AU - Zhuang, Qiandong
AU - Patane, A.
AU - Capizzi, Mario
AU - Krier, Anthony
PY - 2015/1
Y1 - 2015/1
N2 - We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4 K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley-Read-Hall recombination originating from elimination of point defects. For annealing temperatures up to 500 °C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays.
AB - We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4 K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley-Read-Hall recombination originating from elimination of point defects. For annealing temperatures up to 500 °C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays.
KW - In(As)N
KW - Mid-infrared
KW - Rapid thermal annealing (RTA)
KW - Molecular beam epitaxy (MBE)
KW - LT-PL
U2 - 10.1016/j.infrared.2014.11.016
DO - 10.1016/j.infrared.2014.11.016
M3 - Journal article
VL - 68
SP - 138
EP - 142
JO - Infrared Physics and Technology
JF - Infrared Physics and Technology
SN - 1350-4495
ER -