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In(AsN) mid-infrared emission enhanced by rapid thermal annealing

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In(AsN) mid-infrared emission enhanced by rapid thermal annealing. / Kesaria, Manoj; Birindelli, Simone; A.V. Velichko, A.V.; Zhuang, Qiandong; Patane, A.; Capizzi, Mario; Krier, Anthony.

In: Infrared Physics and Technology, Vol. 68, 01.2015, p. 138-142.

Research output: Contribution to journalJournal article

Harvard

Kesaria, M, Birindelli, S, A.V. Velichko, AV, Zhuang, Q, Patane, A, Capizzi, M & Krier, A 2015, 'In(AsN) mid-infrared emission enhanced by rapid thermal annealing', Infrared Physics and Technology, vol. 68, pp. 138-142. https://doi.org/10.1016/j.infrared.2014.11.016

APA

Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M., & Krier, A. (2015). In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology, 68, 138-142. https://doi.org/10.1016/j.infrared.2014.11.016

Vancouver

Kesaria M, Birindelli S, A.V. Velichko AV, Zhuang Q, Patane A, Capizzi M et al. In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology. 2015 Jan;68:138-142. https://doi.org/10.1016/j.infrared.2014.11.016

Author

Kesaria, Manoj ; Birindelli, Simone ; A.V. Velichko, A.V. ; Zhuang, Qiandong ; Patane, A. ; Capizzi, Mario ; Krier, Anthony. / In(AsN) mid-infrared emission enhanced by rapid thermal annealing. In: Infrared Physics and Technology. 2015 ; Vol. 68. pp. 138-142.

Bibtex

@article{2adce11c60fb4e58b6de6ff7794d2bd3,
title = "In(AsN) mid-infrared emission enhanced by rapid thermal annealing",
abstract = "We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4 K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley-Read-Hall recombination originating from elimination of point defects. For annealing temperatures up to 500 °C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays.",
keywords = "In(As)N, Mid-infrared , Rapid thermal annealing (RTA) , Molecular beam epitaxy (MBE) , LT-PL",
author = "Manoj Kesaria and Simone Birindelli and {A.V. Velichko}, A.V. and Qiandong Zhuang and A. Patane and Mario Capizzi and Anthony Krier",
year = "2015",
month = "1",
doi = "10.1016/j.infrared.2014.11.016",
language = "English",
volume = "68",
pages = "138--142",
journal = "Infrared Physics and Technology",
issn = "1350-4495",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - In(AsN) mid-infrared emission enhanced by rapid thermal annealing

AU - Kesaria, Manoj

AU - Birindelli, Simone

AU - A.V. Velichko, A.V.

AU - Zhuang, Qiandong

AU - Patane, A.

AU - Capizzi, Mario

AU - Krier, Anthony

PY - 2015/1

Y1 - 2015/1

N2 - We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4 K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley-Read-Hall recombination originating from elimination of point defects. For annealing temperatures up to 500 °C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays.

AB - We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4 K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley-Read-Hall recombination originating from elimination of point defects. For annealing temperatures up to 500 °C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays.

KW - In(As)N

KW - Mid-infrared

KW - Rapid thermal annealing (RTA)

KW - Molecular beam epitaxy (MBE)

KW - LT-PL

U2 - 10.1016/j.infrared.2014.11.016

DO - 10.1016/j.infrared.2014.11.016

M3 - Journal article

VL - 68

SP - 138

EP - 142

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

SN - 1350-4495

ER -