Home > Research > Publications & Outputs > In(AsN) mid-infrared emission enhanced by rapid...

Associated organisational unit

View graph of relations

In(AsN) mid-infrared emission enhanced by rapid thermal annealing

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>01/2015
<mark>Journal</mark>Infrared Physics and Technology
Number of pages5
Pages (from-to)138-142
Publication StatusPublished
<mark>Original language</mark>English


We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4 K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley-Read-Hall recombination originating from elimination of point defects. For annealing temperatures up to 500 °C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays.