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InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

Research output: Contribution to journalJournal article

Published
Article number105011
<mark>Journal publication date</mark>24/08/2015
<mark>Journal</mark>Semiconductor Science and Technology
Issue number10
Volume30
Number of pages7
Publication statusPublished
Original languageEnglish

Abstract

An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 10 Jones × 10 and 3.0 10 Jones × 10 were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124–337 Hz and ∼8 Hz, respectively. Significantly, these devices could support focal
plane arrays capable of operating under thermoelectric cooling.

Bibliographic note

Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/0268-1242/30/10/105011