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InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

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InAsSb-based nBn photodetectors : lattice mismatched growth on GaAs and low-frequency noise performance. / Craig, Adam; Thompson, Michael; Tian, Z.-B. et al.

In: Semiconductor Science and Technology, Vol. 30, No. 10, 105011, 24.08.2015.

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Craig A, Thompson M, Tian Z-B, Krishna S, Krier A, Marshall A. InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance. Semiconductor Science and Technology. 2015 Aug 24;30(10):105011. doi: 10.1088/0268-1242/30/10/105011

Author

Craig, Adam ; Thompson, Michael ; Tian, Z.-B. et al. / InAsSb-based nBn photodetectors : lattice mismatched growth on GaAs and low-frequency noise performance. In: Semiconductor Science and Technology. 2015 ; Vol. 30, No. 10.

Bibtex

@article{52a6337d0546465f898bd66dc7b02f2a,
title = "InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance",
abstract = "An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 10 Jones × 10 and 3.0 10 Jones × 10 were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124–337 Hz and ∼8 Hz, respectively. Significantly, these devices could support focalplane arrays capable of operating under thermoelectric cooling.",
keywords = "nBn, dark currents, 1/f noise, IMF, specific detectivity",
author = "Adam Craig and Michael Thompson and Z.-B. Tian and S. Krishna and Anthony Krier and Andrew Marshall",
note = "Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/0268-1242/30/10/105011",
year = "2015",
month = aug,
day = "24",
doi = "10.1088/0268-1242/30/10/105011",
language = "English",
volume = "30",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "10",

}

RIS

TY - JOUR

T1 - InAsSb-based nBn photodetectors

T2 - lattice mismatched growth on GaAs and low-frequency noise performance

AU - Craig, Adam

AU - Thompson, Michael

AU - Tian, Z.-B.

AU - Krishna, S.

AU - Krier, Anthony

AU - Marshall, Andrew

N1 - Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/0268-1242/30/10/105011

PY - 2015/8/24

Y1 - 2015/8/24

N2 - An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 10 Jones × 10 and 3.0 10 Jones × 10 were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124–337 Hz and ∼8 Hz, respectively. Significantly, these devices could support focalplane arrays capable of operating under thermoelectric cooling.

AB - An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 10 Jones × 10 and 3.0 10 Jones × 10 were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124–337 Hz and ∼8 Hz, respectively. Significantly, these devices could support focalplane arrays capable of operating under thermoelectric cooling.

KW - nBn

KW - dark currents

KW - 1/f noise

KW - IMF

KW - specific detectivity

U2 - 10.1088/0268-1242/30/10/105011

DO - 10.1088/0268-1242/30/10/105011

M3 - Journal article

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

M1 - 105011

ER -