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InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

Research output: Contribution to journalJournal article


Associated organisational unit

<mark>Journal publication date</mark>03/2009
<mark>Journal</mark>Microelectronics Journal
Number of pages4
<mark>Original language</mark>English


We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.