12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > InSb quantum dot LEDs grown by molecular beam e...
View graph of relations

« Back

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

Research output: Contribution to journalJournal article

Published

Associated organisational unit

Journal publication date03/2009
JournalMicroelectronics Journal
Journal number3
Volume40
Number of pages4
Pages469-472
Original languageEnglish

Abstract

We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.