Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
AU - Carrington, P. J.
AU - Solov'ev, V. A.
AU - Zhuang, Q.
AU - Vanov, S. V.
AU - Krier, A.
PY - 2009/3
Y1 - 2009/3
N2 - We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.
AB - We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.
KW - Mid-infrared
KW - InSb quantum dots
KW - Light emitting diodes
KW - Molecular beam epitaxy
U2 - 10.1016/j.mejo.2008.06.058
DO - 10.1016/j.mejo.2008.06.058
M3 - Journal article
VL - 40
SP - 469
EP - 472
JO - Microelectronics Journal
JF - Microelectronics Journal
SN - 0026-2692
IS - 3
ER -