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  • SPIE paper number 9919-9

    Rights statement: Author(s): P. J. Carrington; E. Repiso; Q. Lu; H. Fujita; A. R. J. Marshall; Q. Zhuang; A. Krier InSb-based quantum dot nanostructures for mid-infrared photonic devices Proc. SPIE 9919, Nanophotonic Materials XIII, 99190C (16 September 2016); doi: 10.1117/12.2236869 Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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InSb-based quantum dot nanostructures for mid-infrared photonic devices

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published
Article number99190C
<mark>Journal publication date</mark>16/09/2016
<mark>Journal</mark>Proceedings of SPIE
Volume9919
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Novel InSb quantum dot (QD) nanostructures grown by molecular beam epitaxy (MBE) are investigated in order to improve the performance of light sources and detectors for the technologically important mid-infrared (2-5 μm) spectral range. Unlike the InAs/GaAs system which has a similar lattice mismatch, the growth of InSb/InAs QDs by MBE is a challenging task due to Sb segregation and surfactant effects. These problems can be overcome by using an Sb-As exchange growth technique to realize uniform, dense arrays (dot density ~1012 cm-2) of extremely small (mean diameter ~2.5 nm) InSb submonolayer QDs in InAs. Light emitting diodes (LEDs) containing ten layers of InSb QDs exhibit bright electroluminescence peaking at 3.8 μm at room temperature. These devices show superior temperature quenching compared with bulk and quantum well (QW) LEDs due to a reduction in Auger recombination. We also report the growth of InSb QDs in InAs/AlAsSb ‘W’ QWs grown on GaSb substrates which are designed to increase the electron-hole (e-h) wavefunction overlap to ~75%. These samples exhibit very good structural quality and photoluminescence peaking near 3.0 μm at low temperatures.

Bibliographic note

Author(s): P. J. Carrington; E. Repiso; Q. Lu; H. Fujita; A. R. J. Marshall; Q. Zhuang; A. Krier InSb-based quantum dot nanostructures for mid-infrared photonic devices Proc. SPIE 9919, Nanophotonic Materials XIII, 99190C (16 September 2016); doi: 10.1117/12.2236869 Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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