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Landau levels in deformed bilayer graphene at low magnetic fields

Research output: Contribution to journalJournal article

<mark>Journal publication date</mark>08/2011
<mark>Journal</mark>Solid State Communications
Issue number16
Number of pages6
Pages (from-to)1088-1093
<mark>Original language</mark>English


We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor v = +/-4 being the most stable in the quantum Hall effect measurement, instead of v = +/-8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at v = +/-4 is, down to very low fields, weakly dependent on the strength of the magnetic field.