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Landau levels in deformed bilayer graphene at low magnetic fields

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Landau levels in deformed bilayer graphene at low magnetic fields. / Mucha Kruczynski, Marcin; Aleiner, Igor L.; Falko, Vladimir.
In: Solid State Communications, Vol. 151, No. 16, 08.2011, p. 1088-1093.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Mucha Kruczynski, M, Aleiner, IL & Falko, V 2011, 'Landau levels in deformed bilayer graphene at low magnetic fields', Solid State Communications, vol. 151, no. 16, pp. 1088-1093. https://doi.org/10.1016/j.ssc.2011.05.019

APA

Mucha Kruczynski, M., Aleiner, I. L., & Falko, V. (2011). Landau levels in deformed bilayer graphene at low magnetic fields. Solid State Communications, 151(16), 1088-1093. https://doi.org/10.1016/j.ssc.2011.05.019

Vancouver

Mucha Kruczynski M, Aleiner IL, Falko V. Landau levels in deformed bilayer graphene at low magnetic fields. Solid State Communications. 2011 Aug;151(16):1088-1093. doi: 10.1016/j.ssc.2011.05.019

Author

Mucha Kruczynski, Marcin ; Aleiner, Igor L. ; Falko, Vladimir. / Landau levels in deformed bilayer graphene at low magnetic fields. In: Solid State Communications. 2011 ; Vol. 151, No. 16. pp. 1088-1093.

Bibtex

@article{b71fda67cfaa46c7b8375da603f08b6d,
title = "Landau levels in deformed bilayer graphene at low magnetic fields",
abstract = "We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor v = +/-4 being the most stable in the quantum Hall effect measurement, instead of v = +/-8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at v = +/-4 is, down to very low fields, weakly dependent on the strength of the magnetic field. ",
author = "{Mucha Kruczynski}, Marcin and Aleiner, {Igor L.} and Vladimir Falko",
year = "2011",
month = aug,
doi = "10.1016/j.ssc.2011.05.019",
language = "English",
volume = "151",
pages = "1088--1093",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "16",

}

RIS

TY - JOUR

T1 - Landau levels in deformed bilayer graphene at low magnetic fields

AU - Mucha Kruczynski, Marcin

AU - Aleiner, Igor L.

AU - Falko, Vladimir

PY - 2011/8

Y1 - 2011/8

N2 - We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor v = +/-4 being the most stable in the quantum Hall effect measurement, instead of v = +/-8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at v = +/-4 is, down to very low fields, weakly dependent on the strength of the magnetic field. 

AB - We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor v = +/-4 being the most stable in the quantum Hall effect measurement, instead of v = +/-8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at v = +/-4 is, down to very low fields, weakly dependent on the strength of the magnetic field. 

U2 - 10.1016/j.ssc.2011.05.019

DO - 10.1016/j.ssc.2011.05.019

M3 - Journal article

VL - 151

SP - 1088

EP - 1093

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 16

ER -