We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor v = +/-4 being the most stable in the quantum Hall effect measurement, instead of v = +/-8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at v = +/-4 is, down to very low fields, weakly dependent on the strength of the magnetic field.