Accepted author manuscript, 2.1 MB, PDF document
Available under license: CC BY: Creative Commons Attribution 4.0 International License
Accepted author manuscript
Licence: CC BY: Creative Commons Attribution 4.0 International License
Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Localized interlayer complexes in heterobilayer transition metal dichalcogenides
AU - Danovich, M.
AU - Ruiz-Tijerina, D. A.
AU - Hunt, R. J.
AU - Szyniszewski, M.
AU - Drummond, N. D.
AU - Fal'ko, V. I.
PY - 2018/5/31
Y1 - 2018/5/31
N2 - We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe2/WSe2 twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in radiative rates of a few μs−1. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite radiative rate with a strong asymptotic twist angle dependence ∝θ−8. Finally, phonon-assisted recombination is considered, with emission of optical phonons in both layers resulting in additional, weaker emission lines, redshifted by the phonon energy.
AB - We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe2/WSe2 twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in radiative rates of a few μs−1. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite radiative rate with a strong asymptotic twist angle dependence ∝θ−8. Finally, phonon-assisted recombination is considered, with emission of optical phonons in both layers resulting in additional, weaker emission lines, redshifted by the phonon energy.
U2 - 10.1103/PhysRevB.97.195452
DO - 10.1103/PhysRevB.97.195452
M3 - Journal article
VL - 97
JO - Physical review B
JF - Physical review B
SN - 1098-0121
M1 - 195452
ER -