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Localized interlayer complexes in heterobilayer transition metal dichalcogenides

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Localized interlayer complexes in heterobilayer transition metal dichalcogenides. / Danovich, M.; Ruiz-Tijerina, D. A.; Hunt, R. J. et al.
In: Physical review B, Vol. 97, 195452, 31.05.2018.

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Danovich M, Ruiz-Tijerina DA, Hunt RJ, Szyniszewski M, Drummond ND, Fal'ko VI. Localized interlayer complexes in heterobilayer transition metal dichalcogenides. Physical review B. 2018 May 31;97:195452. doi: 10.1103/PhysRevB.97.195452

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Danovich, M. ; Ruiz-Tijerina, D. A. ; Hunt, R. J. et al. / Localized interlayer complexes in heterobilayer transition metal dichalcogenides. In: Physical review B. 2018 ; Vol. 97.

Bibtex

@article{e8de1420ec2c4e18877f668d4af4898b,
title = "Localized interlayer complexes in heterobilayer transition metal dichalcogenides",
abstract = "We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe2/WSe2 twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in radiative rates of a few μs−1. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite radiative rate with a strong asymptotic twist angle dependence ∝θ−8. Finally, phonon-assisted recombination is considered, with emission of optical phonons in both layers resulting in additional, weaker emission lines, redshifted by the phonon energy.",
author = "M. Danovich and Ruiz-Tijerina, {D. A.} and Hunt, {R. J.} and M. Szyniszewski and Drummond, {N. D.} and Fal'ko, {V. I.}",
year = "2018",
month = may,
day = "31",
doi = "10.1103/PhysRevB.97.195452",
language = "English",
volume = "97",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",

}

RIS

TY - JOUR

T1 - Localized interlayer complexes in heterobilayer transition metal dichalcogenides

AU - Danovich, M.

AU - Ruiz-Tijerina, D. A.

AU - Hunt, R. J.

AU - Szyniszewski, M.

AU - Drummond, N. D.

AU - Fal'ko, V. I.

PY - 2018/5/31

Y1 - 2018/5/31

N2 - We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe2/WSe2 twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in radiative rates of a few μs−1. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite radiative rate with a strong asymptotic twist angle dependence ∝θ−8. Finally, phonon-assisted recombination is considered, with emission of optical phonons in both layers resulting in additional, weaker emission lines, redshifted by the phonon energy.

AB - We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe2/WSe2 twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in radiative rates of a few μs−1. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite radiative rate with a strong asymptotic twist angle dependence ∝θ−8. Finally, phonon-assisted recombination is considered, with emission of optical phonons in both layers resulting in additional, weaker emission lines, redshifted by the phonon energy.

U2 - 10.1103/PhysRevB.97.195452

DO - 10.1103/PhysRevB.97.195452

M3 - Journal article

VL - 97

JO - Physical review B

JF - Physical review B

SN - 1098-0121

M1 - 195452

ER -